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FDC6327c FDC6327c, rev. e FDC6327c dual n & p-channel 2.5v specified powertrench tm mosfet general description these n & p-channel 2.5v specified mosfets are produced using fairchild semiconductor's advanced powertrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. these devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive so-8 and tssop-8 packages are impractical. applications ? dc/dc converter ? load switch ? motor driving july 2000 features ? n-channel 2.7a, 20v. r ds(on) = 0.08 ? @ v gs = 4.5v r ds(on) = 0.12 ? @ v gs = 2.5v ? p-channel -1.6a, -20v.r ds(on) = 0.17 ? @ v gs = -4.5v r ds(on) = 0.25 ? @ v gs = -2.5v ? fast switching speed. ? low gate charge. ? high performance trench technology for extremely low r ds(on) . ? supersot tm -6 package: small footprint (72% smaller than so-8); low profile (1mm thick). ? 1999 fairchild semiconductor corporation absolute maximum ratings t a = 25c unless otherwise noted symbol parameter n-channel p-channel units v dss drain-source voltage 20 -20 v v gss gate-source voltage 8 8v i d drain current - continuous (note 1a) 2.7 -1.9 a - pulsed 8 -8 p d power dissipation (note 1a) 0.96 w (note 1b) 0.9 (note 1c) 0.7 t j , t stg operating and storage junction temperature range -55 to +150 c thermal characteristics r ja thermal resistance, junction-to-ambient (note 1a) 130 c/w r jc thermal resistance, junction-to-case (note 1) 60 c/w package marking and ordering information device marking device reel size tape width quantity .327 FDC6327c 7? 8mm 3000 d1 s2 g1 d2 s1 g2 supersot -6 tm 1 5 6 3 2 4
FDC6327c FDC6327c, rev. e electrical characteristics t a = 25c unless otherwise noted s y mbol parameter test conditions t yp emin t yp max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a v gs = 0 v, i d = - 250 a n-ch p-ch 20 -20 v ? bv dss ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c i d = - 250 a, referenced to 25 c n-ch p-ch 12 -19 mv/ c i dss zero gate voltage drain current v ds = 16 v, v gs = 0 v v ds = -16 v, v gs = 0 v n-ch p-ch 1 -1 a i gssf gate-body leakage, forward v gs = 8 v, v ds = 0 v all 100 na i gssr gate-body leakage, reverse v gs = -8 v, v ds = 0 v all -100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = 250 a v ds = v gs , i d = -250 a n-ch p-ch 0.4 -0.4 0.9 -0.9 1.5 -1.5 v ? v gs(th) ? t j gate threshold voltage temperature coefficient i d = 250 a, referenced to 25 c i d = - 250 a, referenced to 25 c n-ch p-ch -2.1 2.3 mv/ c r ds(on) static drain-source on-resistance v gs = 4.5 v, i d = 2.7 a v gs = 4.5 v, i d = 2.7 a, t j = 125 c v gs = 2.5 v, i d = 2.2 a v gs = -4.5 v, i d = -1.6 a v gs = -4.5 v, i d = -1.6 a, t j = 125 c v gs = -2.5 v, i d = -1.3 a n-ch n-ch n-ch p-ch p-ch p-ch 0.069 0.094 0.093 0.141 0.203 0.205 0.08 0.13 0.12 0.17 0.27 0.25 ? i d(on) on-state drain current v gs = 4.5 v, v ds = 5 v v gs = -4.5 v, v ds = -5 v n-ch p-ch 8 -8 a g fs forward transconductance v ds = 5 v, i d = 2.7 a v ds = -5 v, i d = -1.9 a n-ch p-ch 7.7 4.5 s dynamic characteristics c iss input capacitance n-ch p-ch 325 315 pf c oss output capacitance n-ch p-ch 75 65 pf c rss reverse transfer ca p acitance n-channel v ds = 10 v, v gs = 0 v, f = 1.0 mhz p-channel v ds = 10 v, v gs = 0 v, f = 1.0 mhz n-ch p-ch 35 24 pf
FDC6327c FDC6327c, rev. e electrical characteristics (continued) t a = 25c unless otherwise noted s y mbol parameter test conditions type min t yp max units switching characteristics (note 2) t d(on) turn-on delay time n-ch p-ch 5 7 15 14 ns t r turn-on rise time n-ch p-ch 9 14 18 25 ns t d(off) turn-off delay time n-ch p-ch 12 14 22 25 ns t f turn-off fall time n-channel v dd = 10 v, i d = 1 a, v gs = 4.5v, r gen = 6 ? p-channel v dd = -10 v, i d = -1 a, v gs = -4.5 v, r gen = 6 ? n-ch p-ch 3 3 9 9 ns q g total gate charge n-ch p-ch 3.25 2.85 4.5 4.0 nc q gs gate-source charge n-ch p-ch 0.65 0.68 nc q gd gate-drain charge n-channel v ds = 10 v, i d = 2.7 a, v gs = 4.5v p-channel v ds = -10 v , i d = -1.9 a , v gs = -4.5v n-ch p-ch 0.90 0.65 nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current n-ch p-ch 0.8 -0.8 a v sd drain-source diode forward voltage v gs = 0 v, i s = 0.8 a (note 2) v gs = 0 v, i s = - 0.8 a (note 2) n-ch p-ch 0.76 -0.79 1.2 -1.2 v notes: 1: r ja is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mou nting surface of the drain pins. r jc is guaranteed by design while r ja is determined by the user's board design. both devices are assumed to be operating and sharing the dissipated heat energy equally. scale 1 : 1 on letter size paper 2: pulse test: pulse width 300 s, duty cycle 2.0% a) 130 c/w when mounted on a 0.125 in 2 pad of 2 oz. copper. b) 140 c/w when mounted on a 0.005 in 2 pad of 2 oz. copper. c) 180 c/w when mounted on a 0.0015 in 2 pad of 2 oz. copper.
FDC6327c FDC6327c, rev. e typical characteristics: n-channel figure 5. transfer characteristics. figure 6. body diode forward voltage variation with source current and temperature. 0 2 4 6 8 10 01234 v ds , drain-source voltage (v) v gs = 4.5v 3.0v 2.5v 2.0v 1.5v 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 0246810 i d , drain current (a) v gs = 2.0v 2.5v 3.0v 3.5v 4.5v 0 2 4 6 8 10 01234 v gs , gate to source voltage (v) t a = -55 o c 25 o c 125 o c v ds = 5v 0.0001 0.001 0.01 0.1 1 10 00.40.81.21.6 v sd , body diode forward voltage (v) t a = 125 o c 25 o c -55 o c v gs = 0v figure 3. on-resistance variation with temperature. figure 4. on-resistance variation with gate-to-source voltage. 0 0.05 0.1 0.15 0.2 0.25 12345 v gs , gate to source voltage (v) i d = 1.3a t a = 125 o c t a = 25 o c 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 -50-25 0 255075100125150 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistance i d = 2.7a v gs = 4.5v figure 1. on-region characteristics. figure 2. on-resistance variation with drain current and gate voltage.
FDC6327c FDC6327c, rev. e typical characteristics: n-channel (continued) 0 100 200 300 400 500 0 4 8 121620 v ds , drain to source voltage (v) c iss c rss c oss f = 1mhz v gs = 0 v 0.01 0.1 1 10 0.1 1 10 100 v ds , drain-source voltage (v) dc 1s 100ms 10ms 1ms 100 ja = 180 o c/w t a = 25 o c 0 1 2 3 4 5 0.01 0.1 1 10 100 1000 single pulse time (sec) single pulse r ja = 180 o c/w t a = 25 o c figure 7. gate-charge characteristics. figure 8. capacitance characteristics. 0 1 2 3 4 5 00.511.522.533.54 q g , gate charge (nc) v gs , gate-source voltage (v) i d = 2.7a v ds = 5v 10v 15v figure 9. maximum safe operating area. figure 10. single pulse maximum power dissipation.
FDC6327c FDC6327c, rev. e typical characteristics: p-channel figure 15. transfer characteristics. figure 16. body diode forward voltage variation with source current and temperature. 0 2 4 6 8 10 012345 -v ds , drain-source voltage (v) -1.5v -2.0v -2.5v -3.0v -3.5v v gs = -4.5v 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 0246810 -i d , dirain current (a) v gs = -2.0v -2.5v -3.0v -3.5v -4.0v -4.5v 0 2 4 6 8 10 01234 -v gs , gate to source voltage (v) t a = -55 o c 25 o c 125 o c v ds = -5v 0.0001 0.001 0.01 0.1 1 10 0 0.4 0.8 1.2 1.6 -v sd , body diode forward voltage (v) v gs = 0v t a = 125 o c 25 o c -55 o c 0 0.1 0.2 0.3 0.4 0.5 12345 -v gs , gate to source voltage (v) i d = -1a t a = 125 o c t a = 25 o c 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 -50 -25 0 25 50 75 100 125 150 t j , junction temperature ( o c) i d = -1.9a v gs = -4.5v figure 11. on-region characteristics. figure 12. on-resistance variation with drain current and gate voltage. figure 13. on-resistance variation with temperature. figure 14. on-resistance variation with gate-to-source voltage.
FDC6327c FDC6327c, rev. e typical characteristics: p-channel (continued) figure 19. maximum safe operating area. figure 20. single pulse maximum power dissipation. 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 q g , gate charge (nc) v ds = -5.0v -10v -15v i d = -1.9a 0 50 100 150 200 250 300 350 400 450 0 4 8 121620 -v ds , drain to source voltage (v) c iss c oss c rss f = 1 mhz v gs = 0 v 0.01 0.1 1 10 0.1 1 10 100 -v ds , drain-source voltage (v) dc 1s 100ms 10ms 1ms 100 ja = 180 o c/w t a = 25 o c 0 1 2 3 4 5 0.01 0.1 1 10 100 1000 single pulse time (sec) single pulse r ja = 180 o c/w t a = 25 o c figure 17. gate-charge characteristics. figure 18. capacitance characteristics.
FDC6327c FDC6327c, rev. e typical characteristics: n & p-channel (continued) figure 21. transient thermal response curve. 0.0001 0.001 0.01 0.1 1 10 100 300 0.01 0.02 0.05 0.1 0.2 0.5 1 t , time (sec) transient thermal resistance 1 single pulse d = 0.5 0.1 0.05 0.02 0.01 0.2 r(t), normalized effective duty cycle, d = t / t 1 2 r (t) = r(t) * r r = 180c/w ja ja ja t - t = p * r (t) ja a j p(pk) t 1 t 2
1998 fairchild semiconductor corporation embossed carrier tape ssot-6 packaging configuration: fi g ur e 1.0 comp onent s lead er tape 500mm mi nimum or 125 emp t y poc kets traile r tap e 300mm mi nimum or 75 empt y poc kets ssot-6 tape leader and trailer configuration: fi g ur e 2.0 cover tape carrier tape note/comments packaging option ssot-6 packaging information stan da rd (no f l ow c ode ) d87z packaging type reel size tnr 7" di a tnr 13" qty per reel/tube/bag 3,000 10,000 box dimension (mm) 184x 187x 47 343x 343x 64 max qty per box 9,000 30,000 weight per unit (gm) 0.0158 0.0158 weight per reel (kg) 0.1440 0.4700 f63tnr label customize label antistatic cover tape 184mm x 187mm x 47mm pizza box fo r standar d option f63tnr label f63tnr label f63tnr label sampl e 343mm x 342mm x 64mm intermediate box fo r d87z option f63tnr label ssot-6 unit orientation 631 631 631 631 631 pin 1 lot: cbvk741b019 fsid: fdc633n d/c1: d9842 qty1: spec rev: spec: qty: 3000 d/c2: qty2: cpn: n/f: f (f63tnr)3 packaging description: ssot-6 parts are shipped in tape. the carrier tape is made from a dissipative (carbon filled) polycarbonate resin. the cover tape is a multilayer film (heat activated adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. these reeled parts in standard option are shipped with 3,000 units per 7" or 177cm diameter reel. the reels are dark blue in color and is made of polystyrene plastic (anti- static coated). other option comes in 10,000 units per 13" or 330cm diameter reel. this and some other options are described in the packaging information table. these full reels are individually barcode labeled and placed inside a pizza box (illustrated in figure 1.0) made of recyclable corrugated brown paper with a fairchild logo printing. one pizza box contains three reels maximum. and these pizza boxes are placed inside a barcode labeled shipping box which comes in different sizes depending on the number of parts shipped. supersot tm -6 tape and reel data and package dimensions august 1999, rev. c
p1 a0 d1 p0 f w e1 d0 e2 b0 tc wc k0 t dimensions are in inches and millimeters tape size reel option dim a dim b dim c dim d dim n dim w1 dim w2 dim w3 (lsl-usl) 8mm 7" dia 7.00 177.8 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 2.165 55 0.331 +0.059/-0.000 8.4 +1.5/0 0.567 14.4 0.311 0.429 7.9 ?10.9 8mm 13" dia 13.00 330 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 4.00 100 0.331 +0.059/-0.000 8.4 +1.5/0 0.567 14.4 0.311 0.429 7.9 ?10.9 see detail aa dim a max 13" diameter option 7" diameter option dim a max see detail aa w3 w2 max measured at hub w1 measured at hub dim n dim d min dim c b min detail aa notes: a0, b0, and k0 dimensions are determined with respect to the eia/jedec rs-481 rotational and lateral movement requirements (see sketches a, b, and c). 20 deg maximum component rotation 0.5mm maximum 0.5mm maximum sketch c (top view) component lateral movement typical component cavity center line 20 deg maximum typical component center line b0 a0 sketch b (top view) component rotation sketch a (side or front sectional view) component rotation user direction of feed ssot-6 embossed carrier tape configuration: fi g ure 3.0 ssot-6 reel configuration: fi g ure 4.0 dimensions are in millimeter pkg type a0 b0 w d0 d1 e1 e2 f p1 p0 k0 t wc tc ssot-6 (8mm) 3.23 +/-0.10 3.18 +/-0.10 8.0 +/-0.3 1.55 +/-0.05 1.125 +/-0.125 1.75 +/-0.10 6.25 min 3.50 +/-0.05 4.0 +/-0.1 4.0 +/-0.1 1.37 +/-0.10 0.255 +/-0.150 5.2 +/-0.3 0.06 +/-0.02 supersot tm -6 tape and reel data and package dimensions, continued july 1999, rev. c
1998 fairchild semiconductor corporation supersot -6 (fs pkg code 31, 33) supersot tm -6 tape and reel data and package dimensions, continued september 1998, rev. a 1:1 scale 1:1 on letter size paper dimensions shown below are in: inches [millimeters] part weight per unit (gram): 0.0158
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